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cond-mat.mtrl-sci2004★ 18 cited
On the energetic origin of self-limiting trenches formed around Ge/Si quantum dots
D. T. Tambe, V. B. Shenoy
At high growth temperatures, the misfit strain at the boundary of Ge quantum dots on Si(001) is relieved by formation of trenches around the base of the islands. The depth of the t…
cond-mat.mtrl-sci2004★ 8 cited
Growth of epitaxial nanowires by controlled coarsening of strained islands
V. B. Shenoy
We show that elongated nanowires can be grown on crystal surfaces by allowing large strained two-dimensional islands to desorb by varying the adatom supersaturation or chemical pot…