4 papers
Effect of anharmonicity of the strain energy on band offsets in semiconductor nanostructures
Olga L. Lazarenkova, Paul von Allmen, Fabiano Oyafuso +2
Anharmonicity of the inter-atomic potential is taken into account for the quantitative simulation of the conduction and valence band offsets for highly-strained semiconductor heter…
Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots
Seungwon Lee, Olga L. Lazarenkova, Fabiano Oyafuso +2
The effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots grown on GaAs is investigated with an atomistic valence-force-field model an…
Effect of electron-nuclear spin interactions on electron-spin qubits localized in self-assembled quantum dots
Seungwon Lee, Paul von Allmen, Fabiano Oyafuso +2
The effect of electron-nuclear spin interactions on qubit operations is investigated for a qubit represented by the spin of an electron localized in a self-assembled quantum dot. T…
Boundary conditions for the electronic structure of finite-extent, embedded semiconductor nanostructures
Seungwon Lee, Fabiano Oyafuso, Paul von Allmen +1
The modeling of finite-extent semiconductor nanostructures that are embedded in a host material requires the numerical treatment of the boundary in a finite simulation domain. For…