93 citations · 513 across the 17 of their papers we have counts for
17 papers
Strain and crystal field splitting inversion in III-Nitrides
Fábio D. Bonani, Anderson H. Siqueira, Horácio W. Leite Alves +1
The wurtzite phase group III-Nitrides (AlN, GaN, InN) have attracted great interest due to their successful applications in the optoelectronics since the 90's. In this paper we per…
Electric field-induced edge state oscillations in GaSb/InAs quantum wells
Marcos H. L. de Medeiros, Raphael L. R. C. Teixeira, Guilherme M. Sipahi +1
Inverted-gap GaSb/InAs quantum wells have long been predicted to show quantum spin Hall insulator (QSHI) behavior. The experimental characterization of the QSHI phase in these syst…
Spin-Lasers: Spintronics Beyond Magnetoresistance
Igor Žutić, Gaofeng Xu, Markus Lindemann +7
Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effec…
Ab initio Investigation of Structural Stability and Exfoliation Energies in Transition Metal Dichalcogenides based on Ti-, V-, and Mo-Group Elements
Carlos M. O. Bastos, Rafael Besse, Juarez L. F. Da Silva +1
In this work, we report an ab initio investigation based on density functional theory of the structural, energetic and electronic properties of 2D layered chalcogenides compounds b…
Electrical tuning of helical edge states in topological multilayers
T. Campos, M. A. T. Sandoval, L. Diago-Cisneros +1
Mainstream among topological insulators, GaSb/InAs quantum wells present a broken gap alignment for the energy bands which supports the quantum spin Hall insulator phase and forms…
Spin-orbit coupling effects in zinc-blende InSb and wurtzite InAs nanowires: Realistic calculations with multiband method
Tiago Campos, Paulo E. Faria Junior, Martin Gmitra +2
A systematic numerical investigation of spin-orbit fields in the conduction bands of III-V semiconductor nanowires is performed. Zinc-blende InSb nanowires are considered along [00…