activity
20042026
most citedPrecursors to Anderson Localization in the Holstein Model: Quantum and Quantum-Classical Solutions

10 citations · 10 across the 5 of their papers we have counts for

collaborators

6 papers

cond-mat.str-el2026

Mott Intermittency at the Metal-Insulator Boundary

Yuxin Wang, Vladimir Dobrosavljević, Jan Jaroszyński +5

The resistivity maximum at a temperature is a recurring feature of bandwidth-tuned Mott systems, yet its meaning remains controversial: is it a coherence-incoh…

cond-mat.str-el2025

Kondo screening and random-singlet formation in highly disordered systems

Lucas G. Rabelo, Igor C. Almeida, Eduardo Miranda +2

We propose a minimal model to capture the anomalous low-temperature thermodynamics of doped semiconductors, such as Si:P, across the metal-insulator transition. We consider pairs o…

cond-mat.supr-con2025

Failed superconductivity in a Mott spin liquid material

Yuxin Wang, Vladimir Dobrosavljević, Eun Sang Choi +5

A central challenge for understanding unconventional superconductivity in most strongly correlated electronic materials is their complicated band structure and presence of competin…

cond-mat.str-el2024★ 10 cited

Precursors to Anderson Localization in the Holstein Model: Quantum and Quantum-Classical Solutions

Petar Mitrić, Vladimir Dobrosavljević, Darko Tanasković

We calculate the frequency-dependent mobility of the Holstein polaron in one dimension near adiabatic limit using the method based on dynamical quantum tipicality, as well as the q…

cond-mat.str-el2023

Relevance of long-range screening in Mott transition examined via a hydrogen lattice

Zi-Jian Lang, Sudeshna Sen, Pak Ki Henry Tsang +3

The Mott transition, a metal-insulator transition due to strong electronic interaction, is observed in many materials without an accompanying change of system symmetry. An importan…

cond-mat.str-el2004

Mechanism of hopping transport in disordered Mott insulators

S. Nakatsuji, V. Dobrosavljevic, D. Tanaskovic +3

By using a combination of detailed experimental studies and simple theoretical arguments, we identify a novel mechanism characterizing the hopping transport in the Mott insulating…