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20242026
most citedResistance Switching Properties of Stoichiometric and Nitrogen Implanted Silicon Nitride Nanolayers on N and P-Type Si Substrates

1 citations · 1 across the 2 of their papers we have counts for

collaborators

11 papers

quant-ph2026

Scalable Quantum Reservoir Computing over Distributed Quantum Architectures

Ioannis Liliopoulos, Georgios D. Varsamis, Konstantinos Rallis +4

Reservoir computing provides an alternative to recurrent neural networks by overcoming the common problems of backpropagation through time and by training only a simple readout lay…

cond-mat.mtrl-sci20251 cited

Resistance Switching Properties of Stoichiometric and Nitrogen Implanted Silicon Nitride Nanolayers on N and P-Type Si Substrates

A. E. Mavropoulis, P. Karakolis, N. Vasileiadis +6

This paper examines the resistive switching characteristics of LPCVD SiNx MNOS ReRAM cells on both heavily doped n- and p-type silicon substrates, focusing on the effects of nitrog…

quant-ph2025

Interfacing Quantum Computing Systems with High-Performance Computing Systems: An Overview

Konstantinos Rallis, Ioannis Liliopoulos, Georgios D. Varsamis +4

The connection and eventual integration of High-Performance Computing (HPC) with Quantum Computing (QC) represents a transformative advancement in computational technology, promisi…

physics.app-ph2025

Memristor Applications: Nanodevices Redefining Technological Landscapes

Nikolaos Vasileiadis, Georgios Ch Sirakoulis, Panagiotis Dimitrakis

A memristor, a two-terminal nanodevice, has garnered substantial attention in recent years due to its distinctive properties and versatile applications. These nanoscale components,…

physics.app-ph2025

Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate

AE Mavropoulis, N Vasileiadis, P Normand +4

In this work, the comparison of resistive memory MIS single-cells without selector (1R), having silicon nitride as switching dielectric, fabricated on SOI and bulk Si wafers is dem…

physics.app-ph2025

Random Telegraph Noise of MIS and MIOS Silicon Nitride memristors at different resistance states

N Vasileiadis, P Loukas, A Mavropoulis +4

Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of partic…