most citedSurface dangling bond states and band-lineups in hydrogen-terminated Si, Ge, and Ge/Si nanowires

31 citations · 31 across the 1 of their papers we have counts for

collaborators

2 papers

cond-mat.mes-hall2010★ 31 cited

Surface dangling bond states and band-lineups in hydrogen-terminated Si, Ge, and Ge/Si nanowires

R. Kagimura, R. W. Nunes, H. Chacham

We report an ab initio study of the electronic properties of surface dangling-bond (SDB) states in hydrogen-terminated Si and Ge nanowires with diameters between 1 and 2 nm, Ge/Si…

cond-mat.mtrl-sci2004

Structures of Si and Ge nanowires in the sub-nanometer range

Ricardo Kagimura, Ricardo W. Nunes, Helio Chacham

We report an ab-initio investigation of several possible Si and Ge pristine nanowires with diameters between 0.5 and 1.2 nm. We considered nanowires based on the diamond structure,…