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20042011
most citedStructures of Si and Ge nanowires in the sub-nanometer range

84 citations · 146 across the 3 of their papers we have counts for

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cond-mat.mes-hall2010★ 31 cited

Surface dangling bond states and band-lineups in hydrogen-terminated Si, Ge, and Ge/Si nanowires

R. Kagimura, R. W. Nunes, H. Chacham

We report an ab initio study of the electronic properties of surface dangling-bond (SDB) states in hydrogen-terminated Si and Ge nanowires with diameters between 1 and 2 nm, Ge/Si…