3 papers
cond-mat.mes-hall2026
Rashba engineering at van der Waals interfaces
Rahul Sharma, Soumya Mukherjee, Fatima Ibrahim +26
Two-dimensional transition metal dichalcogenide (TMD) interfaces offer a versatile platform for studying emergent quantum phenomena and enabling novel device functionalities. When…
cond-mat.mtrl-sci2025
Monolayer control of spin-charge conversion in van der Waals heterostructures
K. Abdukayumov, O. Paull, M. MiÄica +25
The diversity of 2D materials and their van der Waals (vdW) stacking presents a fertile ground for engineering novel multifunctional materials and quantum states of matter. This pe…
cond-mat.mtrl-sci2024
Domain wall migration-mediated ferroelectric switching and Rashba effect tuning in GeTe thin films
Libor VojáÄek, Mairbek Chshiev, Jing Li
Germanium Telluride (GeTe), identified as a ferroelectric Rashba semiconductor, is a promising candidate for future electronic devices in computing and memory applications. However…