529 citations · 830 across the 12 of their papers we have counts for
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Groove-shaped defects in as-grown (001)-oriented -GaO epilayers prepared by halide vapor phase epitaxy
Yongzhao Yao, Daiki Katsube, Hirotaka Yamaguchi +1
Groove-shaped defects (GSDs) degrade the surface flatness of as-grown (001)-oriented -GaO epilayers and necessitate chemical mechanical polishing before device fabricati…
Dislocations in (011)-oriented vertical Bridgman -GaO substrates
Yongzhao Yao, Daiki Katsube, Hirotaka Yamaguchi +1
Dislocation in (011)-oriented -GaO substrates grown by the vertical Bridgman method was investigated using X-ray topography (XRT), combined with X-ray reticulography. Tr…
Three-dimensional visualization of lattice defects in -GaO via synchrotron-radiation Borrmann-effect X-ray topo-tomography
Yongzhao Yao, Daiki Katsube, Hirotaka Yamaguchi +4
beta-Ga2O3 is a promising material for next-generation power electronics; however, its performance is strongly affected by lattice defects such as dislocations. In this study, we d…