activity
20022021
most citedObservation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN

227 citations · 486 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2021★ 32 cited

One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering

Ruyi Zhang, Xinyan Li, Jiachang Bi +7

As a unique perovskite transparent oxide semiconductor, high-mobility La-doped BaSnO3 films have been successfully synthesized by molecular beam epitaxy and pulsed laser deposition…

cond-mat.mtrl-sci2013★ 9 cited

Electron carrier-mediated room temperature ferromagnetism in anatase (Ti,Co)O2

Tomoteru Fukumura, Yoshinori Yamada, Kazunori Ueno +7

Since the discovery of room temperature ferromagnetism in (Ti,Co)O2, the mechanism has been under discussion for a decade. Particularly, the central concern has been whether or not…

cond-mat.mtrl-sci2004★ 43 cited

The role of Cr substitution on the ferromagnetic properties of Ga1-xCrxN

R. K. Singh, Stephen Y. Wu, H. X. Liu +3

Angular-dependent channeling Rutherford Backscattering Spectroscopy (c-RBS) has been used to quantify the fraction of Cr atoms on substitutional, interstitial, and random sites in…

cond-mat.mtrl-sci2004★ 227 cited

Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN

H. X. Liu, Stephen Y. Wu, R. K. Singh +6

We report the observation of ferromagnetism at over 900K in Cr-GaN and Cr-AlN thin films. The saturation magnetization moments in our best films of Cr-GaN and Cr-AlN at low tempera…

cond-mat.mtrl-sci2002★ 175 cited

Synthesis, characterization and modeling of high quality ferromagnetic Cr-doped AlN thin films

Stephen Y. Wu, H. X. Liu, Lin Gu +6

We report a theoretical and experimental investigation of Cr-doped AlN. Density functional calculations predict that the isolated Cr t2 defect level in AlN is 1/3 full, falls appro…