2 papers
cond-mat.mtrl-sci2026
Si/SiGe multi-channel superlattice structure epitaxial growth with segmented temperature control for Next-Generation Logic Devices
Wenlong Yao, Zhigang Li, Guobin Bai +5
Stacking multiple SiSiGe channels in advanced logic devices faces severe thermal budget accumulation, which degrades interfaces via Ge-Si interdiffusion and strain relaxation.This…
physics.app-ph2025
Unveiling Retention Loss Mechanism in FeFETs with Gate-side Interlayer by Decoupling Trapped Charges and Ferroelectric Polarization
Runhao Han, Tao Hu, Jia Yang +10
We propose a direct experimental extraction technique for trapped charges and quantitative energy band diagrams in the FeFETs with metal-insulator-ferroelectric-insulator-semicondu…