16 citations · 37 across the 4 of their papers we have counts for
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cond-mat.mtrl-sci2004★ 16 cited
Interplay of Strain Relaxation and Chemically Induced Diffusion Barriers: Nanostructure Formation in 2D Alloys
T. Volkmann, F. Much, M. Biehl +1
We study the formation of nanostructures with alternating stripes composed of bulk-immiscible adsorbates during submonolayer heteroepitaxy. We evaluate the influence of two mechani…
cond-mat.mtrl-sci2003★ 8 cited
Kinetic model of II-VI(001) semiconductor surfaces: Growth rates in atomic layer epitaxy
T. Volkmann, M. Ahr, M. Biehl
We present a zinc-blende lattice gas model of II-VI(001) surfaces, which is investigated by means of Kinetic Monte Carlo (KMC) simulations. Anisotropic effective interactions betwe…
cond-mat.mtrl-sci2001★ 3 cited
Modelling (001) surfaces of II-VI semiconductors
M. Ahr, M. Biehl, T. Volkmann
First, we present a two-dimensional lattice gas model with anisotropic interactions which explains the experimentally observed transition from a dominant c(2x2) ordering of the CdT…