activity
20052026
most citedTuning band alignment at a semiconductor-crystalline oxide heterojunction via electrostatic modulation of the interfacial dipole

23 citations · 43 across the 4 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

5 papers · 1 filter

cond-mat.mtrl-sci202123 cited

Tuning band alignment at a semiconductor-crystalline oxide heterojunction via electrostatic modulation of the interfacial dipole

M. Chrysler, J. Gabel, T. -L. Lee +14

We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be…

cond-mat.mtrl-sci20215 cited

Hard X-ray photoemission spectroscopy of LaVO/SrTiO: Band alignment and electronic reconstruction

M. Stübinger, J. Gabel, P. Scheiderer +13

The heterostructure consisting of the Mott insulator LaVO and the band insulator SrTiO is considered a promising candidate for future photovoltaic applications. Not only do…

cond-mat.mtrl-sci2021

Thermal and Oxidation Stability of TiW Diffusion Barriers Investigated by Soft and Hard X-ray Photoelectron Spectroscopy

Curran Kalha, Sebastian Bichelmaier, Nathalie K. Fernando +10

The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semiconductor devices, owing to its ability to suppress the diffusion of copper from t…

cond-mat.mtrl-sci2018

Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC

F. C. Bocquet, Y. -R. Lin, M. Franke +6

We report the use of a surfactant molecule during the epitaxy of graphene on SiC(0001) that leads to the growth in an unconventional orientation, namely rotation with re…

cond-mat.mtrl-sci2018

Layer-resolved band bending at the n-SrTiO3(001)/p-Ge(001) interface

Y. Du, P. V. Sushko, S. R. Spurgeon +6

The electronic properties of epitaxial heterojunctions consisting of the prototypical perovskite oxide semiconductor,n-SrTiO3 and the high-mobility Group IV semiconductor p-Ge have…