2 papers
cond-mat.mtrl-sci2022
Defects Evolution and Mg Segregation in Mg-implanted GaN with Ultra-High-Pressure Annealing
Y. Wang, K. Huynh, M. E. Liao +9
Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Exten…
cond-mat.mtrl-sci2005
Heat capacity of -GaN: Isotope Effects
R. K. Kremer, M. Cardona, E. Schmitt +7
Until recently, the heat capacity of GaN had only been measured for polycrystalline powder samples. Semiempirical as well as \textit{first-principles} calculations have appeared wi…