V. Jovanovic

collaborators

2 papers

cond-mat.mes-hall2010

Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction

N. Hrauda, J. J. Zhang, E. Wintersberger +9

SiGe islands are used to induce tensile strain in the Si channel of Field Effect Transistors to achieve larger transconductance and higher current driveabilities. We report on x-ra…

cond-mat.other2005

Symmetry of $k \cdot p$ Hamiltonian in pyramidal InAs/GaAs quantum dots: Application to the calculation of electronic structure

Nenad Vukmirović, Dragan Indjin, Vladimir D. Jovanović +2

A method for the calculation of the electronic structure of pyramidal self-assembled InAs/GaAs quantum dots is presented. The method is based on exploiting the exact $C ˉ_{4}$ …

Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction

Symmetry of k⋅p Hamiltonian in pyramidal InAs/GaAs quantum dots: Application to the calculation of electronic structure

Symmetry of $k \cdot p$ Hamiltonian in pyramidal InAs/GaAs quantum dots: Application to the calculation of electronic structure