9 citations · 20 across the 4 of their papers we have counts for
4 papers
Germanium crystals on silicon show their light
F. Pezzoli, F. Isa, G. Isella +8
Germanium and silicon-germanium alloys have found entry into Si technology thanks to their compatibility with Si processing and their ability to tailor electronic properties by str…
Intra-valence-band mixing in strain-compensated SiGe quantum wells
S. Tsujino, A. Borak, C. Falub +4
We explore the midinfrared absorption of strain-compensated p-Si0.2Ge0.8/Si quantum wells for various well thicknesses and temperatures. Owing to the large band offset due to the l…
The electronic structure of LaSrMnO thin films and its dependence as studied by angle-resolved photoemission
M. Shi, M. C. Falub, P. R. Willmott +6
We present angle-resolved photoemission spectroscopy results for thin films of the three-dimensional manganese perovskite LaSrMnO. We show that the transition t…
Total Angular Momentum Conservation During Tunnelling through Semiconductor Barriers
U. Gennser, M. Scheinert, L. Diehl +9
We have investigated the electrical transport through strained p-Si/Si_{1-x}Ge_x double-barrier resonant tunnelling diodes. The confinement shift for diodes with different well wid…