most citedResistless EUV lithography: photon-induced oxide patterning on silicon

32 citations · 39 across the 4 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2024

Needle in a haystack: efficiently finding atomically defined quantum dots for electrostatic force microscopy

José Bustamante, Yoichi Miyahara, Logan Fairgrieve-Park +5

The ongoing development of single electron, nano and atomic scale semiconductor devices would benefit greatly from a characterization tool capable of detecting single electron char…

cond-mat.mes-hall20241 cited

Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface

Megan Cowie, Procopios C. Constantinou, Neil J. Curson +2

We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO interface. Our measurements demonstrate that two-state fluctuations are localize…

cond-mat.mtrl-sci2023

Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication

Taylor J. Z. Stock, Oliver Warschkow, Procopios C. Constantinou +3

Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical…

cond-mat.mtrl-sci2023

Detection Sensitivity Limit of Hundreds of Atoms with X-Ray Fluorescence Microscopy

Mateus G. Masteghin, Toussaint Gervais, Steven K. Clowes +10

We report X-ray fluorescence (XRF) imaging of nanoscale inclusions of impurities for quantum technology. A very bright diffraction-limited focus of the X-ray beam produces very hig…

physics.app-ph202332 cited

Resistless EUV lithography: photon-induced oxide patterning on silicon

Li-Ting Tseng, Prajith Karadan, Dimitrios Kazazis +7

In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading litho…

cond-mat.mtrl-sci20237 cited

Momentum-space imaging of ultra-thin electron liquids in delta-doped silicon

Procopios Constantinou, Taylor J. Z. Stock, Eleanor Crane +11

Two-dimensional dopant layers (-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such…