182 citations · 369 across the 7 of their papers we have counts for
7 papers
Thermal Annealing of High Dose P Implantation in 4H-SiC
Cristiano Calabretta, Massimo Zimbone, Eric G. Barbagiovanni +7
In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminesce…
Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition
E. G. Barbagiovanni, V. Strano, G. Franzò +2
Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (V) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient beh…
Influence of interface potential on the effective mass in Ge nanostructures
E. G. Barbagiovanni, S. Cosentino, D. J. Lockwood +3
The role of the interface potential on the effective mass of charge carriers is elucidated in this work. We develop a new theoretical formalism using a spatially dependent effectiv…
Role of Quantum Confinement in Luminescence Efficiency of Group IV Nanostructures
E. G. Barbagiovanni, D. J. Lockwood, N. L. Rowell +7
Experimental results obtained previously for the photoluminescence efficiency (PL) of Ge quantum dots (QDs) are theoretically studied. A - plot of PL ve…
Quantum confinement in Si and Ge nanostructures: Effect of crystallinity
Eric G. Barbagiovanni, David J. Lockwood, Raimundo N. Costa Filho +2
We look at the relationship between the preparation method of Si and Ge nanostructures (NSs) and the structural, electronic, and optical properties in terms of quantum confinement…
Quantum Confinement in Si and Ge Nanostructures
Eric G. Barbagiovanni, David J. Lockwood, Peter J. Simpson +1
We apply perturbative effective mass theory as a broadly applicable theoretical model for quantum confinement (QC) in all Si and Ge nanostructures including quantum wells (QWs), wi…