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cond-mat.mtrl-sci2005
Self-assembly of parallel atomic wires and periodic clusters of silicon on a vicinal Si(111) surface
T. Sekiguchi, S. Yoshida, K. M. Itoh
Silicon self-assembly at step edges in the initial stage of homoepitaxial growth on a vicinal Si(111) surface is studied by scanning tunneling microscopy (STM). The resulting atomi…
cond-mat.mtrl-sci2005
Atomically straight steps on vicinal Si (111) surfaces prepared by step-parallel current in the kink-up direction
S. Yoshida, T. Sekiguchi, K. M. Itoh
We demonstrate that annealing of a vicinal Si(111) surface at about 800 C with a direct current in the direction that ascends the kinks enhances the formation of atomically straigh…