15 citations · 27 across the 3 of their papers we have counts for
3 papers
NO2 adsorption on GaN surface and its interaction with the yellow-luminescence-associated surface state
Yury Turkulets, Nitzan Shauloff, Or Haim Chaulker +2
Trapping of charge at surface states is a longstanding problem in GaN that hinders a full realization of its potential as a semiconductor for microelectronics. At least part of thi…
Is the Mg-related GaN blue luminescence deep-level an MgO surface state?
Or Haim Chaulker, Yury Turkulets, Ilan Shalish
Mg is currently the only p-type dopant in technological use in GaN. Its incorporation into the GaN lattice is difficult. It requires a thermal treatment that only partially activat…
The GaN yellow-luminescence-related surface state and its interaction with air
Yury Turkulets, Nitzan Shauloff, Or Haim Chaulker +3
Yellow luminescence (YL) is probably the longest and most studied defect-related luminescence band in GaN, yet its electronic structure or chemical identity remain unclear. Most of…