Interplay between Fermi surface topology and ordering in URu${}_2$Si${}_2$ revealed through abrupt Hall coefficient changes in strong magnetic fields

Y. S. Oh, Kee Hoon Kim, P. A. Sharma +3

Temperature- and field-dependent measurements of the Hall effect of pure and 4 % Rh-doped URu${}_2$Si${}_2$ reveal low density (0.03 hole/U) high mobility carriers to be unique to…