26 citations · 85 across the 6 of their papers we have counts for
6 papers
On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)
Petr Steindl, Elisa Maddalena Sala, Benito Alén +2
Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carr…
Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix
Petr Steindl, Elisa Maddalena Sala, Benito Alén +3
The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and i…
Type II InAs/GaAsSb Quantum Dots: Highly Tunable Exciton Geometry and Topology
José M. Llorens, Lukasz Wewior, Edson R. Cardozo de Oliveira +5
External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type I…
Strain balanced quantum posts
D. Alonso-Álvarez, B. Alén, J. M. Ripalda +8
Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most s…
In-situ accumulated stress measurements: application to strain balanced quantum dots and quantum posts
D. Alonso-Álvarez., B. Alén, J. M. Ripalda +6
In this work we use the in-situ accumulated stress monitoring technique to evaluate the evolution of the stress during the strain balancing of InAs/GaAs quantum dots and quantum po…
Absorptive and dispersive optical responses of excitons in a single quantum dot
B. Alén, A. Högele, M. Kroner +6
We have determined both the real and imaginary parts of the dielectric polarizability of a single quantum dot. The experiment is based on the observation and the manipulation of Ra…