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physics.app-ph2026
Hot LO Phonon-Induced RF Nonlinearity in GaN High-Electron-Mobility Transistors
Ankan Ghosh Dastider, Matt Grupen, Nicholas C. Miller +1
Hot longitudinal optical (LO) phonons in GaN have recently been identified as a major factor degrading the DC performance of GaN high-electron-mobility transistors (HEMTs) by 30-60…
physics.app-ph2026
Physics-based Full-band GaN High-Electron-Mobility Transistor Simulation Suggests Upper Bound of LO Phonon Lifetime
Ankan Ghosh Dastider, Matt Grupen, Ashwin Tunga +1
Intrinsic limits to device performance arise from fundamental material properties that define the best achievable operation, independent of engineering constraints. In GaN high-ele…
physics.app-ph2025
Strain-tunable inter-valley scattering defines universal mobility enhancement in n- and p-type 2D TMDs
Sheikh Mohd Ta-Seen Afrid, He Lin Zhao, Arend M. van der Zande +1
Strain fundamentally alters carrier transport in semiconductors by modifying their band structure and scattering pathways. In transition-metal dichalcogenides (TMDs), an emerging c…