Non-Destructive Imaging of Breakdown Process in Ferroelectric Capacitors Using \textit{In-situ} Laser-Based Photoemission Electron Microscopy

Hirokazu Fujiwara, Yuki Itoya, Masaharu Kobayashi +3

HfO${}_2$-based ferroelectrics are one of the most actively developed functional materials for memory devices. However, in HfO${}_2$-based ferroelectric devices, dielectric breakdown i…