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cond-mat.mtrl-sci2005
Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy
J. Liu, E. Girgis, P. Bach +4
We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layer system consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer. The junctions show a tunne…
cond-mat.mtrl-sci2004
Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers
M. Sawicki, F. Matsukura, A. Idziaszek +7
It is demonstrated by SQUID measurements that (Ga,Mn)As films can exhibit perpendicular easy axis at low temperatures, even under compressive strain, provided that the hole concent…