69 citations · 734 across the 32 of their papers we have counts for
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cond-mat.mtrl-sci2003★ 31 cited
Role of microstructure in porous silicon gas sensors for NO
Zeno Gaburro, Paolo Bettotti, Massimo Saiani +4
Electrical conductivity of porous silicon fabricated form heavily doped p-type silicon is very sensitive to NO, even at concentrations below 100 ppb. However, sensitivity stron…
cond-mat.mtrl-sci2003★ 35 cited
Opposite effects of NO on electrical injection in porous silicon gas sensors
Zeno Gaburro, Claudio J. Oton, Lorenzo Pavesi +1
The electrical conductance of porous silicon fabricated with heavily doped p-type silicon is very sensitive to NO. A concentration of 10 ppb can be detected by monitoring the c…