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V. Sessi

1 paper hereh-index 251.8k citations61 works total

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  • middle author1

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  • cond-mat.mtrl-sci1

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cond-mat.mtrl-sci2005

How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: the case of InAs/GaAs(001)

F. Arciprete, E. Placidi, V. Sessi +3

The two- to three-dimensional growth transition in the InAs/GaAs(001) heterostructure has been investigated by atomic force microscopy. The kinetics of the density of three dimensi…

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