4 papers
Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3
Tsung-Han Tsai, Chenyu Wang, Jiarui Gong +14
Diamond and gallium nitride are complementary semiconductors for forming p-n junctions because of their respective doping limitations. Understanding the band alignment of grafted d…
Grafted Low-Leakage Si/AlN p-n Diodes Enabled by Fluorinated AlN Interface
Yi Lu, Tsung-Han Tsai, Qingxiao Wang +19
Ultrawide-bandgap AlN is a promising material for next-generation power electronics; however, its practical implementation is hindered by unstable surface chemistry and the high ac…
Preliminary Demonstration of Diamond-GaN pn Diodes via Grafting
Jie Zhou, Yi Lu, Chenyu Wang +18
Ultrawide bandgap (UWBG) semiconductors exhibit exceptional electrical and thermal properties, offering strong potential for high power and high frequency electronics. However, eff…
Neural Bounding
Stephanie Wenxin Liu, Michael Fischer, Paul D. Yoo +1
Bounding volumes are an established concept in computer graphics and vision tasks but have seen little change since their early inception. In this work, we study the use of neural…