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20242026
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physics.app-ph2024

Wafer-scale Semiconductor Grafting: Enabling High-Performance, Lattice-Mismatched Heterojunctions

Jie Zhou, Qiming Zhang, Jiarui Gong +14

Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challe…

physics.app-ph2024

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

Haris Naeem Abbasi, Jie Zhou, Ding Wang +9

Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offeri…

physics.app-ph2024

Single-crystalline GaAs/Si Heterojunction Tunnel Diodes Interfaced by an Ultrathin Oxygen-enriched Layer

Jie Zhou, Yifan Wang, Ziqian Yao +13

We report the fabrication and characteristics of GaAs/Si p+/n+ heterojunction tunnel diodes. These diodes were fabricated via grafting the freestanding single-crystalline p-type de…

physics.app-ph2024

Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy

Yang Liu, Jiarui Gong, Sudip Acharya +12

GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequa…

physics.app-ph2024

AlGaAs/GeSn p-i-n diode interfaced with ultrathin AlO

Yang Liu, Yiran Li, Sudip Acharya +9

This study presents the fabrication and characterizations of an AlGaAs/GeSn/GeSn p-i-n double heterostructure (DHS) diode following the grafting a…