5 papers
Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3
Tsung-Han Tsai, Chenyu Wang, Jiarui Gong +14
Diamond and gallium nitride are complementary semiconductors for forming p-n junctions because of their respective doping limitations. Understanding the band alignment of grafted d…
Grafted Low-Leakage Si/AlN p-n Diodes Enabled by Fluorinated AlN Interface
Yi Lu, Tsung-Han Tsai, Qingxiao Wang +19
Ultrawide-bandgap AlN is a promising material for next-generation power electronics; however, its practical implementation is hindered by unstable surface chemistry and the high ac…
Preliminary Demonstration of Diamond-GaN pn Diodes via Grafting
Jie Zhou, Yi Lu, Chenyu Wang +18
Ultrawide bandgap (UWBG) semiconductors exhibit exceptional electrical and thermal properties, offering strong potential for high power and high frequency electronics. However, eff…
Single-crystalline GaAs/Si Heterojunction Tunnel Diodes Interfaced by an Ultrathin Oxygen-enriched Layer
Jie Zhou, Yifan Wang, Ziqian Yao +13
We report the fabrication and characteristics of GaAs/Si p+/n+ heterojunction tunnel diodes. These diodes were fabricated via grafting the freestanding single-crystalline p-type de…
Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
Yang Liu, Jiarui Gong, Sudip Acharya +12
GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequa…