most citedUnstable Retention Behavior in MIFIS FEFET: Accurate Analysis of the Origin by Absolute Polarization Measurement

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cond-mat.mtrl-sci2024★ 1 cited

Unstable Retention Behavior in MIFIS FEFET: Accurate Analysis of the Origin by Absolute Polarization Measurement

Song-Hyeon Kuk, Kyul Ko, Bong Ho Kim +2

Ferroelectric field-effect-transistor (FEFET) has emerged as a scalable solution for 3D NAND and embedded flash (eFlash), with recent progress in achieving large memory window (MW)…