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Complete Au-free Metallization Platform for UWBG AlGaN channel MOS-HEMTs using Ti/Al/Ti Ohmic Contacts and Refractory TiN/Pt Gates
Mafruda Rahman, Dharun Manoharan, Tariq Jamil +8
Au-free ohmic contacts and refractory gate stacks are critical for integrating ultra-wide-bandgap (UWBG) Al-rich AlGaN transistors with Si-CMOS technology. In this work, we demonst…
800 C Air-Ambient Operation of Extreme-Bandgap AlGaN (x>0.6) Digital and Random-Alloy Channel HEMTs
Abdullah Al Mamun Mazumder, Tariq Jamil, Mafruda Rahman +11
This work demonstrates the high-temperature (room to 800 C) operation of thin AlGaN digital alloy (DA) short-period superlattice (SPSL), and random alloy…
High Voltage (~2 kV) field-plated Al0.64Ga0.36N-channel HEMTs
Md Tahmidul Alam, Jiahao Chen, Kenneth Stephenson +5
High voltage (~2 kV) AlGaN-channel HEMTs were fabricated with 64% Aluminum composition in the channel. The average on-resistance was ~75 ohm. mm (~21 miliohm. cm^2) for LGD = 20 mi…