46 citations · 46 across the 2 of their papers we have counts for
2 papers
physics.app-ph2024
Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy
Patrick Fiorenza, Marco Zignale, Edoardo. Zanetti +6
This paper reports the results presented in an invited poster during the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023 held in Sorrento, Italy. Th…
physics.app-ph2022★ 46 cited
Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs
Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo +6
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during…