458 citations · 2.4k across the 47 of their papers we have counts for
6 papers · 1 filter
Electronic properties of type-II Weyl semimetal WTe. A review perspective
P. K. Das, D. Di Sante, F. Cilento +17
Currently, there is a flurry of research interest on materials with an unconventional electronic structure, and we have already seen significant progress in their understanding and…
Bi monocrystal formation on InAs(111)A and B substrates
L. Nicolaï, J. -M. Mariot, U. Djukic +13
The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spect…
Domain formation mechanism of the Si(110)"16 x 2" reconstruction
N. K. Lewis, N. B. Clayburn, E. Brunkow +6
The main factor that determines which of the two domains form upon reconstruction of the Si(110)"16 x 2" surface has been investigated. LEED and STM images showed that the domain o…
A topological material in the III-V family: heteroepitaxial InBi on InAs
Laurent Nicolaï, Ján Minár, Maria Christine Richter +15
InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, cl…
Switching From Reactant to Substrate Engineering in the Selective Synthesis of Graphene Nanoribbons
Néstor Merino-Díez, Jorge Lobo-Checa, Pawel Nita +12
The challenge of synthesizing graphene nanoribbons (GNRs) with atomic precision is currently being pursued along a one-way road, based on the synthesis of adequate molecular precur…
Epitaxial Growth of Single-Orientation High-Quality MoS Monolayers
Harsh Bana, Elisabetta Travaglia, Luca Bignardi +16
We present a study on the growth and characterization of high-quality single-layer MoS with a single orientation, i.e. without the presence of mirror domains. This single orien…