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cond-mat.mtrl-sci2024
In situ etching of \b{eta}-Ga2O3 using tert-butyl chloride in an MOCVD system
Cameron A. Gorsak, Henry J. Bowman, Katie R. Gann +9
In this study, we investigate in situ etching of \b{eta}-Ga2O3 in a metal-organic chemical vapor deposition (MOCVD) system using tert-Butyl chloride (TBCl). We report the successfu…
cond-mat.mtrl-sci2024
Adsorption-controlled Growth of Homoepitaxial c-plane Sapphire Films
Lena N. Majer, Tolga Acartürk, Peter A. van Aken +13
Sapphire is a technologically highly relevant material, but it poses many challenges to performing epitaxial thin-film deposition. We have identified and applied the conditions for…
cond-mat.mtrl-sci2022
Silicon-doped -GaO films grown at 1 m/h by suboxide molecular-beam epitaxy
Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak +21
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow -GaO at a growth rate of ~1 m/h with control of the silicon doping concentration from 5x10…