activity
20052016
most citedElectron temperature in electrically isolated Si double quantum dots

20 citations · 39 across the 5 of their papers we have counts for

collaborators

5 papers

quant-ph2016

An optimal single-electron charge qubit for solid-state double quantum dots

J. Mosakowski, E. T. Owen, T. Ferrus +3

We report on an optimal single-electron charge qubit for a solid-state double quantum dot (DQD) system and analyse its dynamics under a time-dependent linear detuning, using GPU ac…

cond-mat.mes-hall2011★ 20 cited

Electron temperature in electrically isolated Si double quantum dots

A. Rossi, T. Ferrus, D. A. Williams

Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated doubl…

cond-mat.mes-hall2011★ 6 cited

Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots

T. Ferrus, A. Rossi, W. Lin +3

We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within…

cond-mat.mes-hall2009★ 8 cited

Cryogenic instrumentation for fast current measurement in a silicon single electron transistor

T. Ferrus, D. G. Hasko, Q. R. Morrissey +8

We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-freq…

quant-ph2005★ 5 cited

A finite element analysis of a silicon based double quantum dot structure

S. Rahman, J. Gorman, C. H. W. Barnes +2

We present the results of a finite-element solution of the Laplace equation for the silicon-based trench-isolated double quantum-dot and the capacitively-coupled single-electron tr…