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Parthasarathy Seshadri

1 paper hereh-index 337 citations10 works total

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author position
  • middle author1

Across the 1 of 1 paper where every author was matched, so the position is known.

fields
  • physics.app-ph1

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collaborators

1 paper

physics.app-ph2024

Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with >1015/cm3 free carrier concentration using close-coupled showerhead MOCVD reactor

Swarnav Mukhopadhyay, Parthasarathy Seshadri, Mobinul Haque +6

Thin Si-doped Al-rich (Al>0.85) regrown Al(Ga)N layers were deposited on AlN on Sapphire template using metal-organic chemical vapor deposition (MOCVD) techniques. The optimization…

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