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physics.app-ph2024
Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor
Dinusha Herath Mudiyanselage, Dawei Wang, Ziyi He +2
This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic chemical vapor deposition (MOCVD) with an ultra…
physics.app-ph2023
3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD
Dinusha Herath Mudiyanselage, Dawei Wang, Ziyi He +2
This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding…