activity
20052015
most citedPhoton generation in an electromagnetic cavity with a time-dependent boundary

158 citations · 435 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.supr-con2015★ 12 cited

Parity effect and single-electron injection for Josephson-junction chains deep in the insulating state

K. Cedergren, S. Kafanov, J-L. Smirr +2

We have made a systematic investigation of charge transport in 1D chains of Josephson junctions where the characteristic Josephson energy is much less than the single-island Cooper…

quant-ph2011★ 64 cited

High Q-factor Sapphire Whispering Gallery Mode Microwave Resonator at Single Photon Energies and milli-Kelvin Temperatures

Daniel L. Creedon, Yarema Reshitnyk, Warrick Farr +3

The microwave properties of a crystalline sapphire dielectric whispering gallery mode resonator have been measured at very low excitation strength (E/hf=1) and low temperatures (T…

cond-mat.mtrl-sci2010★ 21 cited

Single Crystal Sapphire at milli-Kelvin Temperatures: Observation of Electromagnetically Induced Thermal Bistability in High Q-factor Whispering Gallery Modes

Daniel L. Creedon, Michael E. Tobar, Jean-Michel Le Floch +2

Resonance modes in single crystal sapphire (-AlO) exhibit extremely high electrical and mechanical Q-factors ( at 4K), which are important characteristics…

quant-ph2010★ 158 cited

Photon generation in an electromagnetic cavity with a time-dependent boundary

C. M. Wilson, T. Duty, M. Sandberg +3

We report the observation of photon generation in a microwave cavity with a time-dependent boundary condition. Our system is a microfabricated quarter-wave coplanar waveguide cavit…

cond-mat.mes-hall2008★ 42 cited

Is charge noise in single electron transistors and charge qubits caused by metallic grains?

S. Kafanov, H. Brenning, T. Duty +1

We report on measurements of low frequency noise in a single electron transistor from a few Hz up to 10 MHz. Measurements were done for different bias and gate voltages, which allo…

cond-mat.supr-con2005★ 138 cited

Observation of quantum capacitance in the Cooper-pair transistor

T. Duty, G. Johansson, K. Bladh +3

We have fabricated a Cooper-pair transistor (CPT) with parameters such that for appropriate voltage biases, the sub-gap charge transport takes place via slow tunneling of quasipart…