211 citations · 677 across the 8 of their papers we have counts for
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cond-mat.mtrl-sci1996★ 4 cited
Ab initio shallow acceptor levels in gallium nitride
V. Fiorentini, F. Bernardini, A. Bosin +1
Impurity levels and formation energies of acceptors in wurtzite GaN are predicted ab initio. Be_Ga is found to be the shallow (thermal ionization energy 0.06 eV); …
mtrl-th1996★ 71 cited
Structure, barriers and relaxation mechanisms of kinks in the 90-degree partial dislocation in silicon
R. W. Nunes, J. Bennetto, David Vanderbilt
Kink defects in the 90-degree partial dislocation in silicon are studied using a linear-scaling density-matrix technique. The asymmetric core reconstruction plays a crucial role, g…