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physics.app-ph2024
NAND-like SOT-MRAM-based Approximate Storage for Error-Tolerant Applications
Min Wang, Zhengyi Hou, Chenyi Wang +13
We demonstrate approximate storage based on NAND-like spin-orbit torque (SOT) MRAM, through "device-modeling-architecture" explorations. We experimentally achieve down to 1E-5 leve…
physics.app-ph2023
SOT-MRAM-Enabled Probabilistic Binary Neural Networks for Noise-Tolerant and Fast Training
Puyang Huang, Yu Gu, Chenyi Fu +10
We report the use of spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) to implement a probabilistic binary neural network (PBNN) for resource-saving applications…