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physics.app-ph2024
NAND-like SOT-MRAM-based Approximate Storage for Error-Tolerant Applications
Min Wang, Zhengyi Hou, Chenyi Wang +13
We demonstrate approximate storage based on NAND-like spin-orbit torque (SOT) MRAM, through "device-modeling-architecture" explorations. We experimentally achieve down to 1E-5 leve…
physics.app-ph2023★ 1 cited
Threshold Current for Field-free Switching of the In-plane Magnetization in the Three-terminal Magnetic Tunnel Junction
Hongjie Ye, Zhaohao Wang
Three-terminal magnetic tunnel junction (MTJ), where non-volatile magnetization state can be switched via spin orbit torque (SOT), is attracting massive research interests since it…