Resistive switching in HfO2-x/La0.67Sr0.33MnO3 heterostructure: An intriguing case of low H-field susceptibility of an E-field controlled active interface

Vivek Antad, Parvez A. Shaikh, Abhijit Biswas +5

High-performance non-volatile resistive random access memories (ReRAM) and their small stimuli control are of immense interest for high-speed computation and big-data processing in…