Experimental evidence of a metal-insulator transition in a half-filled Landau level

C. -T. Liang, J. E. F. Frost, M. Y. Simmons +2

We have measured the low-temperature transport properties of a high-mobility front-gated GaAs/Al_{0.33}Ga_{0.67}As heterostructure. By changing the applied gate voltage, we can var…