Hsin-Wen Huang

most citedUtilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors

9 citations · 9 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mes-hall2025

Dominant scattering mechanisms in the low/high electric field transport in cryogenic 2D confinement in Silicon (110) with high- $κ$ oxides

Hsin-Wen Huang, Xi-Jun Fang, Edward Chen +1

The performance of silicon nano-devices at cryogenic temperatures is critical for quantum qubit control circuits and space applications. Using multi-valley Monte Carlo simulations,…

cond-mat.mtrl-sci2023★ 9 cited

Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors

Yun-Pin Chiu, Hsin-Wen Huang, Yuh-Renn Wu

Janus transition metal dichalcogenides (JTMDs) have attracted much attention because of their outstanding electronic and optical properties. The additional out-of-plane dipole in J…

Dominant scattering mechanisms in the low/high electric field transport in cryogenic 2D confinement in Silicon (110) with high-κ oxides

Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors

Dominant scattering mechanisms in the low/high electric field transport in cryogenic 2D confinement in Silicon (110) with high- $κ$ oxides