1 citations · 1 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2026
Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications
V. N. Jmerik, D. V. Nechaev, E. A. Evropeitsev +11
The paper reports on fundamental properties of the GaN/AlN quantum wells (QWs) with nominal subcritical thicknesses of 0.75-2 monolayers (MLs). They are grown by plasma-activated m…
cond-mat.mes-hall2024★ 1 cited
Electrical properties of highly-doped MBE-grown gallium phosphide nanowires
Vladislav Sharov, Kristina Novikova, Alexey Mozharov +3
Efficient doping of semiconductor nanowires remains a major challenge towards the commercialization of nanowire-based devices. In this work we investigate the growth regimes and el…