Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(100) interfaces: Interfacial chemical states and complete band energy diagrams

O. Romanyuk, A. Paszuk, I. Gordeev +14

The epitaxial growth of the polar GaP(100) on the nonpolar Si(100) substrate suffers from inevitable defects at the antiphase domain boundaries, resulting from mono-atomic steps on…