278 citations · 733 across the 12 of their papers we have counts for
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cond-mat.mtrl-sci2024
Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment
Christoph Wilflingseder, Johannes Aberl, Enrique Prado Navarette +11
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport…
cond-mat.mes-hall2024★ 1 cited
A group-IV double heterostructure light emitting diode for room temperature gain in Silicon
Andreas Salomon, Johannes Aberl, Lada Vukušić +8
The lack of straightforward epitaxial integration of useful telecom lasers on silicon remains the major bottleneck for bringing optical interconnect technology down to the on-chip…