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cond-mat.mes-hall2016★ 2 cited

Direct Characterization of Band Bending in GaP/Si(001) Heterostructures with Hard X-ray Photoelectron Spectroscopy

Martin Schmid, Kunie Ishioka, Andreas Beyer +9

We apply hard X-ray photoelectron spectroscopy (HAXPES) to investigate the electronic structures in ~50-nm thick epitaxial GaP layers grown on Si(001) under different conditions. D…