most citedGrowth mechanisms of GaN on the O-terminated ZnO(000-1) surfaces

1 citations · 1 across the 1 of their papers we have counts for

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2 papers

cond-mat.mtrl-sci2006★ 1 cited

Growth mechanisms of GaN on the O-terminated ZnO(000-1) surfaces

Katsutoshi Fujiwara, Akira Ishii, Toshikazu Ebisuzaki +4

We have investigated the stability of the 1ML-GaN on the O-polarity ZnO(000-1) interface structure using the first-principles calculation. We have found in our calculated results t…

cond-mat2003

Modeling and simulation of polycrystalline ZnO thin-film transistors

Faruque M. Hossain, J. Nishii, S. Takagi +6

Thin film transistors (TFTs) made of transparent channel semiconductors such as ZnO are of great technological importance, because their insensitivity to visible light makes device…